2. An N-type sample of silicon has uniform density (Nd = 1019/cm–3 ) of arsenic, and a P-type silicon sample has a uniform density (Na = 101

Question

2. An N-type sample of silicon has uniform density (Nd = 1019/cm–3 ) of arsenic, and a P-type silicon sample has a uniform density (Na = 1015 /cm–3 ) of boron. For each sample, determine the following: (a) The temperature at which the intrinsic concentration ni exceeds the impurity density by factor of 10.

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Farah 4 years 2021-07-31T18:06:23+00:00 1 Answers 81 views 0

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  1. ngochoa
    0
    2021-07-31T18:08:20+00:00
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    Answer: The temperature at which the intrinsic concentration exceeds the impurity density by factor of 10 is 636 K.

    Explanation:

    The given data is as follows.

             N_{d} = 10^{19} per cm^{-3}

             N_{a} = 10^{15} per cm^{-3}

    As we are given that n_{i}exceeds impurity density by a factor of 10.

    Therefore,   n_{i} = 10N_{d}

       10^{20} = 3.87 \times 10^{6} \times T^{\frac{3}{2}}e^({\frac{-7014}{T}})

    T^{\frac{3}{2}}e^({\frac{-7014}{T}}) = \frac{10^{20}}{3.87 \times 10^{6}}

              T = 1985 K

    Also,  n_{i} = 10N_{d}

           10^{6} = 3.87 \times 10^{16} \times T^{\frac{3}{2}}e^({\frac{-7014}{T}})

                    T = 636 K

    Thus, we can conclude that the temperature at which the intrinsic concentration exceeds the impurity density by factor of 10 is 636 K.

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